1 October 2007 Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique
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J. of Micro/Nanolithography, MEMS, and MOEMS, 6(4), 043004 (2007). doi:10.1117/1.2792178
Abstract
Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50 μC/cm2. By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists.
Akinori Saeki, Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao, Hai Deng, Michael J. Leeson, "Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(4), 043004 (1 October 2007). http://dx.doi.org/10.1117/1.2792178
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KEYWORDS
Line edge roughness

Monte Carlo methods

Diffusion

Lithography

Molecules

Image enhancement

Electron beam lithography

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