1 January 2008 Extreme ultraviolet light production from a ZaP flow z-pinch xenon plasma
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 7(1), 013003 (2008). doi:10.1117/1.2898515
A potential alternative extreme ultraviolet (EUV) light source for lithography is studied. The ZaP (z-pinch) Flow Z-Pinch experiment is studying the effect of sheared flow on gross plasma stability. In the experiment, hydrogen gas is used to produce plasma with quiescent periods in the magnetic mode activity, which are 2000 times longer than other plasma concepts for creating EUV light, in a configuration with 300 times the volume. Similar results are found with xenon gas. An EUV detector designed using an AXUV100, silicon/zirconium filtered photodiode with an 11- to 18-nm bandpass is used to detect EUV emissions within that spectrum and the total power of the emissions. EUV emissions in 17.4% of the z-pinch have lasted longer than 16 μs, with an average power of 550 kW. The total EUV power potential inband at 13.5 nm from 17.4% of the z-pinch is calculated to be 140 W at the intermediate focus, with a total 100-cm z-pinch emission potential of 800 W at 1 kHz. Based on this information, the ZaP Flow Z-Pinch experiment is a promising EUV light source for lithography if properly scaled and optimized for EUV light production.
K. A. Munson, U. Shumlak, B. A. Nelson, "Extreme ultraviolet light production from a ZaP flow z-pinch xenon plasma," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(1), 013003 (1 January 2008). http://dx.doi.org/10.1117/1.2898515

Extreme ultraviolet








Collection efficiency of EUV sources
Proceedings of SPIE (June 16 2003)
AEG PtSi modules: a summary
Proceedings of SPIE (June 17 1996)
Picosecond UV laser pulses propagation in atmosphere
Proceedings of SPIE (January 26 2005)
X-ray lasers as probes to measure plasma ablation rates
Proceedings of SPIE (October 11 2007)

Back to Top