1 April 2008 High-accuracy correction of critical dimension errors appearing in large-scale integration fabrication processes
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Abstract
In our previous paper, we proposed a new method to obtain accurate pattern dimensions for correcting global critical dimension (CD) errors, which are defined as errors of CD uniformity in a region of several millimeters to several centimeters. The method is based on the pattern modulation method [a method of correcting CD errors by controlling figure sizes of large-scale integration (LSI) patterns]. An essential point of our method is to take into account the difference between the pattern density of the original LSI pattern and that of the corrected pattern (which has a pattern dimension different from original one after pattern modulation for correction) to provide an accurate correction. In this paper, we apply the proposed method to correct CD errors caused by flare and microloading effects. It is shown from numerical calculations that our method can suppress the correction error to less than 0.1 nm for both cases by three iterations. It is strongly recommended that our method be used for a wide range of applications to provide the necessary CD accuracies of the future.
Takayuki Abe, Jun Yashima, Hayato Shibata, "High-accuracy correction of critical dimension errors appearing in large-scale integration fabrication processes," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(2), 023006 (1 April 2008). https://doi.org/10.1117/1.2909474
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