1 July 2008 High-resolution permanent photoresist laminate for microsystem applications
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J. of Micro/Nanolithography, MEMS, and MOEMS, 7(3), 033009 (2008). doi:10.1117/1.2964217
Abstract
A new permanent dry film photoresist, TMMF S2000, is tested and evaluated for microsystem applications. The resist provides high resolution, high aspect ratios, and homogeneous resist thicknesses. Aspect ratios up to 6:1 (height:width) may be achieved for both structures and channels. Buried structures are created by covering channels with a laminated resist layer. In addition, a very fast direct wafer bonding process is developed. In this process, the resist is patterned on a wafer and directly bonded to a second wafer using pressure and heat. Both techniques enable the fabrication of microfluidic chips with high aspect ratio structures.
U. Stohr, P. Vulto, P. Hoppe, Gerald A. Urban, Holger Reinecke, "High-resolution permanent photoresist laminate for microsystem applications," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(3), 033009 (1 July 2008). http://dx.doi.org/10.1117/1.2964217
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KEYWORDS
Semiconducting wafers

Microfluidics

Photoresist materials

Wafer bonding

Liquids

Photoresist processing

Glasses

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