1 October 2008 Ultralow k1 oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method
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J. of Micro/Nanolithography, MEMS, and MOEMS, 7(4), 043001 (2008). doi:10.1117/1.2990735
Abstract
It was shown previously that the double line and space formation method (DLFM) is superior to other methods for forming a dense contact hole (C/H) resist pattern by simulation, and a 0.30-k1 1:1 C/H resist pattern was formed experimentally. A through process of C/H formation from resist patterning to metal filling is presented. The oxide square C/Hs transferred from the resist pattern formed by the DLFM could be filled with metal, although the transferred C/Hs had square corners in comparison with the conventional C/H resist patterning. On the other hand, the combination of the DLFM and the “pack and cover process” makes it possible to form resist random C/Hs on grids. So, the possibility of forming random C/Hs filled with metal is shown. Moreover, the resolution limit of the DLFM is discussed. The 0.29-k1 (half pitch 65-nm) and 0.27-k1 (half pitch 56-nm) 1:1 C/H resist patterns could be formed with optimized dipole illumination. So, random C/Hs with k1 below 0.30 are expected to be formed.
Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, Soichi Inoue, "Ultralow k1 oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(4), 043001 (1 October 2008). https://doi.org/10.1117/1.2990735
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