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1 October 2008 Source for extreme ultraviolet lithography by the tabletop storage ring MIRRORCLE
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Advances of electron storage rings to beam currents of above 1 A and tabletop sizes make possible the development of a synchrotron-based source for EUV lithography (EUVL) at ~13.5-nm wavelength. The MIRRORCLE storage rings can provide on average 3-A electron beam current, 1-min lifetime, 15-ms radiation damping, and beam size ~3*3 mm2. MIRRORCLE-20SX, MIRRORCLE-6X, and MIRRORCLE-CV4 store electrons with energies of 20 MeV, 6 MeV, and 4 MeV, respectively. These machines can emit EUV from a tiny target, hit by the circulating beam, via transition radiation or diffusive radiation. Using a multilayer microelectromechanical system (MEMS) target allows enhancement and spectral purification of the emitted EUV. Aligning many such MEMS along the electron beam orbit and radiation collection by only one quasi-elliptical EUV mirror can provide EUV satisfying the joint requirements for an EUVL source.
©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Hironari Yamada, Dorian Minkov, Norio Toyosugi, Masaki Morita, Daisuke Hasegawa, Ahsa Moon, and Ejike Kenneth Okoye "Source for extreme ultraviolet lithography by the tabletop storage ring MIRRORCLE," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(4), 043004 (1 October 2008).
Published: 1 October 2008


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