1 July 2009 Impact of mask three-dimensional effects on resist-model calibration
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 8(3), 030501 (2009). doi:10.1117/1.3158356
Abstract
We report on a comparison between a full-physical resist model that was calibrated to experimental line/space (L/S) critical dimension (CD) data under the flat-mask (also called "thin-mask" or "Kirchhoff") approximation with the model obtained when using a mask 3-D calculation engine (i.e., one that takes into account the mask-topography effects). Both models were tested by evaluating their prediction of the CDs of a large group of 1-D and 2-D structures. We found a clear correlation between the measured-predicted CD difference and the magnitude of the mask 3-D CD effect, and show that the resist model calibrated with a mask 3-D calculation engine clearly offers a better CD predictability for certain types of structures.
Peter De Bisschop, Thomas Muelders, Ulrich K. Klostermann, Thomas Schmoeller, John J. Biafore, Stewart A. Robertson, Mark D. Smith, "Impact of mask three-dimensional effects on resist-model calibration," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 030501 (1 July 2009). http://dx.doi.org/10.1117/1.3158356
Submission: Received ; Accepted
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KEYWORDS
3D modeling

Critical dimension metrology

Data modeling

Photomasks

Calibration

Cadmium

Optical proximity correction

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