Fast simulation methods and modeling for extreme ultraviolet masks with buried defects

Christopher H. Clifford; Andrew R. Neureuther

doi:10.1117/1.3152372

1 July 2009 Fast simulation methods and modeling for extreme ultraviolet masks with buried defects

Christopher H. Clifford, Andrew R. Neureuther

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 3, 031402 (July 2009). https://doi.org/10.1117/1.3152372

Abstract

To support the successful implementation of extreme ultraviolet (EUV) lithography for high volume manufacturing, a spectrum of simulation tools is needed. For investigation of new materials and geometries, rigorous but computationally expensive simulations are required. For faster simulations, a new method, rapid absorber defect interaction computation for advanced lithography (RADICAL), is introduced. RADICAL is a modular program, that uses separate methods to simulate the absorber pattern and defective multilayer. Two different methods are used to simulate the multilayer within RADICAL: ray tracing and single surface approximation (SSA). Ray tracing can accurately simulate arbitrary multilayer geometries. SSA is only accurate for defects shorter than 4.5 nm on the multilayer surface. With ray tracing, RADICAL is nearly 1000 times faster than finite difference time domain (FDTD) for simulating line-space patterns over buried defects. RADICAL with SSA is nearly 25,000 times faster than FDTD. The accuracy of RADICAL is shown to be excellent for simulating defects in focus, and for simulating defects smaller than 2.5 nm through focus. The error can be as high as 4 nm in predicting CD change for larger defects out of focus due to the complexities of modeling the phase of buried defects. But this error is predictable and will likely be acceptable for most applications considering the huge speed advantages of RADICAL.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Christopher H. Clifford and Andrew R. Neureuther "Fast simulation methods and modeling for extreme ultraviolet masks with buried defects," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 031402 (1 July 2009). https://doi.org/10.1117/1.3152372

Published: 1 July 2009

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available