1 January 2009 Litho-only double patterning approaches: positive–negative versus positive–positive tone
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J. of Micro/Nanolithography, MEMS, and MOEMS, 8(1), 011006 (2009). doi:10.1117/1.3042219
Double patterning is considered the most viable option for 32- and 22-nm complementary metal-oxide semiconductor (CMOS) node development and has seen a surge of interest due to the remaining challenges of next-generation lithography systems. Most double patterning approaches previously described require intermediate processing steps (e.g., hard mask etching, resist freezing, spacer material deposition, etc.). These additional steps can add significantly to the cost of producing the double pattern. Alternative litho-only double patterning processes are investigated to achieve a composite image without the need for intermediate processing steps. A comparative study between positive–negative (TArF-P6239+N3007) and positive–positive tone (TArF-P6239+PP002) imaging is described. In brief, the positive–positive tone approach is found to be a superior solution due to a variety of considerations.
Michael M. Crouse, Ryusuke Uchida, Youri van Dommelen, Tomoyuki Ando, Emil P. Schmitt-Weaver, Masaru Takeshita, Shunder Wu, Robert M. Routh, "Litho-only double patterning approaches: positive–negative versus positive–positive tone," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(1), 011006 (1 January 2009). https://doi.org/10.1117/1.3042219

Double patterning technology

Critical dimension metrology

Image processing

Nanoimprint lithography

Photoresist processing



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