30-nm half-pitch metal patterning using Motif<sup>TM</sup> critical dimension shrink technique and double patterning

Janko Versluijs; Jean-Francois de Marneffe; Danny Goossens; Tom Vandeweyer; Vincent Wiaux; Herbert Struyf; Mireille Maenhoudt; Mohand Brouri; Johan Vertommen; Jisoo Kim; Helen Zhu; Helen Zhu

doi:10.1117/1.3066632

1 January 2009 30-nm half-pitch metal patterning using Motif^TM critical dimension shrink technique and double patterning

Janko Versluijs, Jean-Francois de Marneffe, Danny Goossens, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Jisoo Kim, Helen Zhu, Helen Zhu

Author Affiliations +

J. of Micro/Nanolithography, MEMS, and MOEMS, 8(1), 011007 (2009). https://doi.org/10.1117/1.3066632

Abstract

Double-patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double-patterning process is discussed for 30-nm half-pitch interconnect structures, using 1.2 numerical aperture immersion lithography combined with the Motif^TM critical dimension (CD) shrink technique. An adjusted optical proximity correction (OPC) calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography-based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30-nm half-pitch pattern into the MHM.

Citation Download Citation

Janko Versluijs, Janko Versluijs, Jean-Francois de Marneffe, Jean-Francois de Marneffe, Danny Goossens, Danny Goossens, Tom Vandeweyer, Tom Vandeweyer, Vincent Wiaux, Vincent Wiaux, Herbert Struyf, Herbert Struyf, Mireille Maenhoudt, Mireille Maenhoudt, Mohand Brouri, Mohand Brouri, Johan Vertommen, Johan Vertommen, Jisoo Kim, Jisoo Kim, Helen Zhu, Helen Zhu, Helen Zhu, Helen Zhu, } "30-nm half-pitch metal patterning using Motif^TM critical dimension shrink technique and double patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(1), 011007 (1 January 2009). https://doi.org/10.1117/1.3066632 . Submission:

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $20.00

Non-members: $25.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years