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1 January 2009 30-nm half-pitch metal patterning using MotifTM critical dimension shrink technique and double patterning
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Abstract
Double-patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double-patterning process is discussed for 30-nm half-pitch interconnect structures, using 1.2 numerical aperture immersion lithography combined with the MotifTM critical dimension (CD) shrink technique. An adjusted optical proximity correction (OPC) calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography-based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30-nm half-pitch pattern into the MHM.
©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Janko Versluijs, Jean-Francois de Marneffe, Danny Goossens, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Jisoo Kim, Helen Zhu, and Helen Zhu "30-nm half-pitch metal patterning using MotifTM critical dimension shrink technique and double patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(1), 011007 (1 January 2009). https://doi.org/10.1117/1.3066632
Published: 1 January 2009
JOURNAL ARTICLE
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