1 January 2009 Free-standing C60 nanowire fabricated using XeF2 sacrificial dry etching
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Abstract
We report a fabrication of doubly supported free-standing buckminsterfullerene (C60) nanowires onto single crystal silicon microstructures in order to demonstrate an integration of carbon nanomaterials to surface-micromachined microelectromechanical devices. By irradiating vacuum-deposited C60 film with an electron beam, polymerized C60 nanowires were patterned. Free-standing structures of the C60 nanowires were obtained by sacrificial etching of underlying silicon structures using XeF2 gas. The supporting 5-µm thick silicon structure was released using vapor hydrofluoric acid. The C60 nanowire of 2-µm width, 25-µm length, and 40-nm thickness connected to a movable single crystal silicon structure was successfully fabricated.
© (2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Toshiyuki Tsuchiya, Yasutake Ura, Yomoya Jomori, Koji Sugano, Osamu Tabata, "Free-standing C60 nanowire fabricated using XeF2 sacrificial dry etching," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(1), 013020 (1 January 2009). https://doi.org/10.1117/1.3094745 . Submission:
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