1 April 2009 Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma
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Abstract
An investigation of a VO2 etch mechanism in Cl2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO2 etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl3 and/or VCl2 in the reaction products.
© (2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Tae-Hoon Lee, Alexander M. Efremov, Yong-Hyun Ham, Sun Jin Yun, Nam-Ki Min, Munpyo Hong, Kwang-Ho Kwon, "Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 021110 (1 April 2009). https://doi.org/10.1117/1.3100423 . Submission:
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