Translator Disclaimer
1 April 2009 Hyper-thin resist system for photomask-making in double-patterning generation
Author Affiliations +
Abstract
Double-patterning generation at 32-nm node and beyond raises many subjects for photomask blanks. We especially focus on the resolution improvement by hyper-thin resist combined with the hardmask process called the hyper-thin resist system (HTRS). Cr-hardmask has been specially developed for the HTRS, and this Cr material shows an extremely high etching rate. Additionally, we confirmed that a 55-nm resist thickness was available to etch the Cr-hardmask and last then the resolution of MoSi-absorber patterns was improved by HTRS, such as 45-nm LS, 60-nm isolated line and hole, and 35-nm isolated space. Moreover, the Cr-hardmask showed almost no film stress, which is necessary to achieve the image placement accuracy required for the double patterning. MoSi-binary with HTRS meets the photomask technology requirements for 32-nm node and beyond.
©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Masahiro Hashimoto and Hideaki Mitsui "Hyper-thin resist system for photomask-making in double-patterning generation," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 023001 (1 April 2009). https://doi.org/10.1117/1.3116127
Published: 1 April 2009
JOURNAL ARTICLE
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Optimization of ArF resist for 100 nm node DOE...
Proceedings of SPIE (August 24 2001)
Approaching zero etch bias at Cr etch process
Proceedings of SPIE (November 04 2005)
Progress of NIL template making
Proceedings of SPIE (May 15 2007)

Back to Top