1 July 2009 Stochastic modeling in lithography: use of dynamical scaling in photoresist development
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Abstract
The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1+1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent α and the growth exponent β were found to match the 1+1 KPZ values exactly.
© (2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Chris A. Mack, "Stochastic modeling in lithography: use of dynamical scaling in photoresist development," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 033001 (1 July 2009). https://doi.org/10.1117/1.3158612 . Submission:
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