1 July 2009 Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows
Author Affiliations +
In this paper we study interactions of double patterning technology (DPT) with lithography, optical proximity correction (OPC) and physical design flows for the 22-nm device node. DPT methods decompose the original design intent into two individual masking layers, which are each patterned using single exposures and existing 193-nm lithography tools. Double exposure and etch patterning steps create complexity for both process and design flows. DPT decomposition is a critical software step that will be performed in physical design and also in mask synthesis. Decomposition includes cutting (splitting) of original design intent polygons into multiple polygons, where required, and coloring of the resulting polygons. We evaluate the ability to meet key physical design goals, such as reduce circuit area, minimize relayout effort, ensure DPT compliance, guarantee patterning robustness on individual layer targets, ensure symmetric wafer results, and create uniform wafer density for the individual patterning layers.
© (2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Kevin Lucas, Kevin Lucas, Christopher M. Cork, Christopher M. Cork, Alexander Miloslavsky, Alexander Miloslavsky, Gerard Luk-Pat, Gerard Luk-Pat, Levi D. Barnes, Levi D. Barnes, John Hapli, John Hapli, John Lewellen, John Lewellen, Gregory Rollins, Gregory Rollins, Vincent Wiaux, Vincent Wiaux, Staf Verhaegen, Staf Verhaegen, } "Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 033002 (1 July 2009). https://doi.org/10.1117/1.3158061 . Submission:

Back to Top