1 July 2009 Hotspot management and its applications in ultralow k1 lithography
Author Affiliations +
Abstract
We have constructed a hotspot management flow and applied the flow to large-scale integration (LSI) manufacturing in the ultralow k1 lithography era. This flow involves three main management steps: hotspot reduction, hotspot extraction, and hotspot monitoring. Hotspot reduction works with lithography-friendly restricted design rule (RDR) and manufacturability check (MC). Hotspot extraction is carried out with a view to realizing short operation time and accurate extraction. Hotspot monitoring is achieved with tolerance-based verification in the mask fabrication process and wafer process (lithography and etching). These technology elements could be integrated into the LSI fabrication flow for reduction of total cost, quick turnaround time (TAT), and ramp-up to volume production. In addition to discussion of the technology elements in hotspot management, we also provide typical applications for important decisions in LSI fabrication: photomask availability for any exposure tools ("exposure tool yokoten") and process condition updates in LSI fabrication.
© (2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
Kohji Hashimoto, Satoshi Usui, Shigeki Nojima, Toshiya Kotani, Eiji Yamanaka, Satoshi Tanaka, Soichi Inoue, "Hotspot management and its applications in ultralow k1 lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 033007 (1 July 2009). https://doi.org/10.1117/1.3213232 . Submission:
JOURNAL ARTICLE
8 PAGES


SHARE
RELATED CONTENT

S-FIL technology: cost of ownership case study
Proceedings of SPIE (May 06 2005)
Good OPC, where will this drive mask CD tolerance and...
Proceedings of SPIE (December 08 1995)
Characterization of optical proximity correction features
Proceedings of SPIE (August 22 2001)
Verifying RET mask layouts
Proceedings of SPIE (July 12 2002)
Improved manufacturability by OPC based on defocus data
Proceedings of SPIE (July 10 2003)

Back to Top