1 October 2009 Imaging budgets for extreme ultraviolet optics: ready for 22-nm node and beyond
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J. of Micro/Nanolithography, MEMS, and MOEMS, 8(4), 041509 (2009). doi:10.1117/1.3238543
We derive an imaging budget from the performance of extreme ultraviolet (EUV) optics with NA = 0.32, and demonstrate that the requirements for 22-nm applications are met. Based on aerial image simulations, we analyze the impact of all relevant contributors, ranging from conventional quantities like straylight or aberrations, to EUV-specific topics, namely the influence of 3-D mask effects and faceted illumination pupils. As test structures we consider dense to isolated lines, contact holes, and 2-D elbows. We classify the contributions in a hierarchical order according to their weight in the critical dimension uniformity (CDU) budget and identify the main drivers. The underlying physical mechanisms causing different contributions to be critical or less significant are clarified. Finally, we give an outlook for the 16- and 11-nm nodes. Future developments in optics manufacturing will keep the budgets controlled, thereby paving the way to enable printing of these upcoming nodes.
Marc Bienert, Aksel Göhnermeier, Oliver Natt, Martin Lowisch, Paul Gräupner, Tilmann Heil, Reiner B. Garreis, Koen van Ingen Schenau, Steven G. Hansen, "Imaging budgets for extreme ultraviolet optics: ready for 22-nm node and beyond," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(4), 041509 (1 October 2009). https://doi.org/10.1117/1.3238543


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