1 October 2009 Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete
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J. of Micro/Nanolithography, MEMS, and MOEMS, 8(4), 041510 (2009). doi:10.1117/1.3275786
The Selete full-field EUV exposure tool, EUV1, manufactured by Nikon, is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-and-space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture of 0.25, and conventional illumination (σ=0.8). The results show that 25-nm L&S patterns were resolved. Dynamic exposure experiments demonstrate that the resolution is 45 nm across the exposure field. The CD uniformity across a shot is 3 nm. Evaluation of the overlay performance of the EUV1 using alignment marks on a processed wafer revealed the repeatability to be better than 1 nm. The overlay accuracy obtained with enhanced global alignment was less than 4 nm (3σ) after linear correction. These results show that the EUV1 has attained the quality level of a typical alpha-level lithography tool and is suitable for test site verification.
Kazuo Tawarayama, Hajime Aoyama, Shunko Magoshi, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka, "Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(4), 041510 (1 October 2009). https://doi.org/10.1117/1.3275786

Semiconducting wafers

Optical alignment

Extreme ultraviolet lithography

Extreme ultraviolet



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