1 January 2010 Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process
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Abstract
We present a 3×3 micro-optoelectromechanical systems (MOEMS) phase shifter array that achieves a λ/4 vertical displacement with peak-to-valley deformation within λ/10 (514-nm light source). The mirror reflective surface is made of an aluminum layer with a high optical reflectivity exceeding 90%. Each individual micromirror pixel is controlled and driven by comb drive actuators. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company 0.35-µm 2P4M complementary metal-oxide semiconductor process. In-house post-processing is utilized to reserve a 40-µm-thick bulk-silicon under the 200 µm×200 µm mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of λ/4 at 38 V. The device resonant frequency is 3.71 kHz, and the fill factor is 0.65. This MOEMS phase shifter array can be used as a spatial light modulator in holographic data storage systems.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jin-Chern Chiou, Jin-Chern Chiou, Chen-Chun Hung, Chen-Chun Hung, Li-Jung Shieh, Li-Jung Shieh, Zhao-Long Tsai, Zhao-Long Tsai, } "Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(1), 013030 (1 January 2010). https://doi.org/10.1117/1.3280264 . Submission:
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