1 January 2010 Fully differential CMOS-MEMS z-axis accelerometer with torsional structures and planar comb fingers
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Abstract
Fully differential z-axis acceleration sensing often requires complicated multiwafer bonding processes. We present an integrated fully differential complementary metal-oxide semiconductor-microelectromechanical systems (CMOS-MEMS) z-axis accelerometer utilizing planar comb fingers and a pair of single-crystal silicon (SCS) torsional springs. The sidewall capacitors formed by multiple CMOS interconnect metal layers are exploited for fully differential displacement sensing with a common-centroid wiring configuration. Single crystal silicon is used throughout the device to form robust microstructures. A deep reactive ion etching (DRIE)-based microfabrication process with large processing tolerance has been developed to allow monolithic integration of CMOS circuitry with sensor structures and high fabrication yield. With an on-chip low-power, low-noise, dual-chopper amplifier that has a measured 44.5-dB gain and 1-mW power consumption, the fabricated integrated z-axis accelerometer demonstrates a sensitivity of 250 mV/g and an overall noise floor of 110 µg/√Hz.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Mohd Haris, Hongwei Qu, "Fully differential CMOS-MEMS z-axis accelerometer with torsional structures and planar comb fingers," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(1), 013031 (1 January 2010). https://doi.org/10.1117/1.3295714 . Submission:
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