1 April 2010 Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process
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Abstract
When a thinner absorber mask is practically applied to the extreme ultraviolet lithography for ultra large scale integration chip production, it is inevitable to introduce an extreme ultraviolet (EUV) light shield area to suppress leakage of the EUV light from adjacent exposure shots. We believe that a light-shield border of the multilayer etching type is a promising structure in terms of mask process flexibility for higher mask critical dimension accuracy. We evaluate the etching impact of the absorber and multilayer on the mask flatness and image placement change through the mask process of a thin absorber mask with a light-shield border of the multilayer etching type structure. We clarify the relation between mask flatness and mask image placement shift.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Takashi Kamo, Yuusuke Tanaka, Toshihiko Tanaka, Iwao Nishiyama, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Tsutomu Shoki, Youichi Usui, "Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(2), 023005 (1 April 2010). https://doi.org/10.1117/1.3378154 . Submission:
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