1 April 2010 Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet
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Abstract
The actual extreme ultraviolet lithography tools will have aberrations around seven times larger than those of the latest ArF lithography tools in wavelength normalized rms. We calculated the influence of aberrations on the size error and pattern shift error using Zernike sensitivity analysis. Mask-induced aberration restricts the specification of aberration. Without periodic additional pattern, the aberration level that can be accepted to form 22 nm dual-gate patterns was <8 mλ rms. Arranging the periodic additional pattern relaxed the aberration tolerance. With periodic additional pattern, the acceptable aberration level to form 22 nm patterns was below <37 mλ rms. It is important to make pattern periodicity for the relaxation of the aberration specification.
© (2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Yumi Nakajima, Yumi Nakajima, Takashi Sato, Takashi Sato, Ryoichi Inanami, Ryoichi Inanami, Tetsuro Nakasugi, Tetsuro Nakasugi, Tatsuhiko Higashiki, Tatsuhiko Higashiki, } "Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(2), 023009 (1 April 2010). https://doi.org/10.1117/1.3421948 . Submission:
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