1 November 2007 Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen
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Abstract
The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation.
Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Toshiharu Saiki, Masaru Sakai, Kazunari Matsuda, Takashi Ishizuka, "Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen," Journal of Nanophotonics 1(1), 011592 (1 November 2007). https://doi.org/10.1117/1.2816112 . Submission:
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