1 December 2007 Exposure dependence of the developed depth in nonadiabatic photolithography using visible optical near fields
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J. of Nanophotonics, 1(1), 011595 (2007). doi:10.1117/1.2833587
Abstract
We have developed new type of photolithography based on a nonadiabatic photochemical process that exposes an ultraviolet-photoresist using a visible optical near field. Investigating the exposure dependence of the developed depth using nonadiabatic photolithography, we found that the depth increased with the exposure threshold. To explain this result, the optical field intensity was simulated by using the finite-difference time-domain method. The evolution of the developed depth was proportional to the optical field intensity and its spatial gradient, agreeing closely with the simulated result that took into account the nonadiabatic processes. Another experimental result is to support our explanation, that in nonadiabatic photolithography, a component of the exposure progresses inside the photoresist.
Tadashi Kawazoe, Motoichi Ohtsu, Yasuhisa Inao, Ryou Kuroda, "Exposure dependence of the developed depth in nonadiabatic photolithography using visible optical near fields," Journal of Nanophotonics 1(1), 011595 (1 December 2007). http://dx.doi.org/10.1117/1.2833587
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KEYWORDS
Photoresist materials

Optical lithography

Near field optics

Near field

Photomasks

Finite-difference time-domain method

Atomic force microscopy

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