1 July 2007 Design of photonic crystal directional couplers for electro-optical wavelength switching in Si technology
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J. of Nanophotonics, 1(1), 013551 (2007). doi:10.1117/1.2768383
Abstract
Electro-optical wavelength switch in Si technology operating around λ= 1.55 μm and based on a photonic crystal directional coupler configuration was studied using Plane Wave Method and Finite Difference Time Domain simulations. Owing to the exploitation of slow wave supermodes, ultra-compact active devices (~ 20 μm) exploiting free carrier plasma dispersion effect in Si can be designed. Injection of input/output strip access waveguides with the photonic core area is optimized using tapering stages to gradually reduce light group velocity. With carrier injection around 1018 cm-3, the coupler configuration can be used as an optical switch of individual wavelengths or a multiplexer/demultiplexer device with active routing of wavelengths.
Eric Cassan, Damien Bernier, Delphine Marris-Morini, Guillaume Maire, Laurent Vivien, "Design of photonic crystal directional couplers for electro-optical wavelength switching in Si technology," Journal of Nanophotonics 1(1), 013551 (1 July 2007). http://dx.doi.org/10.1117/1.2768383
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KEYWORDS
Waveguides

Directional couplers

Dispersion

Silicon

Electro optics

Refractive index

Switches

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