23 May 2016 Photoabsorption by the electronic subsystem of semiconductor quantum dots
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The cross section for photoabsorption by a semiconductor quantum dot has been calculated with the previously obtained densities of electrons in the surface traps, conduction electrons, and electrons in unionized impurities. It has been found that the total photoabsorption cross section has two characteristic maxima corresponding to absorption by conduction electrons and by electrons in traps in the bulk of the quantum dot. The contribution of electrons in traps on the surface of the quantum dot is small and manifests itself only in a relatively short-wavelength range of the spectrum.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Sergey V. Sakhno, Sergey V. Sakhno, Mordko A. Kozhushner, Mordko A. Kozhushner, Vladimir S. Posvyanskii, Vladimir S. Posvyanskii, Leonid I. Trakhtenberg, Leonid I. Trakhtenberg, } "Photoabsorption by the electronic subsystem of semiconductor quantum dots," Journal of Nanophotonics 10(2), 026018 (23 May 2016). https://doi.org/10.1117/1.JNP.10.026018 . Submission:

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