18 February 2016 In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy
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J. of Nanophotonics, 10(3), 033502 (2016). doi:10.1117/1.JNP.10.033502
This work reports on a chemical beam epitaxy growth study of InGaAs/GaAs quantum dots (QDs) engineered using an in-situ indium-flush technique. The emission energy of these structures has been selectively tuned over 225 meV by varying the dot height from 7 to 2 nm. A blueshift of the photoluminescence (PL) emission peak and a decrease of the intersublevel spacing energy are observed when the dot height is reduced. Numerical investigations of the influence of dot structural parameters on their electronic structure have been carried out by solving the single-particle one-band effective mass Schrödinger equation in cylindrical coordinates, for lens-shaped QDs. The correlation between numerical calculations and PL results is used to better describe the influence of the In-flush technique on both the dot height and the dot composition.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jihene Zribi, Denis Morris, Bouraoui Ilahi, Amal Aldhubaib, Vincent Aimez, Richard Ares, "In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy," Journal of Nanophotonics 10(3), 033502 (18 February 2016). https://doi.org/10.1117/1.JNP.10.033502

Gallium arsenide


Indium gallium arsenide

Quantum dots


Indium arsenide

Electron holes

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