6 July 2016 Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures
Author Affiliations +
J. of Nanophotonics, 10(3), 036001 (2016). doi:10.1117/1.JNP.10.036001
The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Aviya Bennett, Avraham R. Chelly, Avi Karsenty, Ilan Gadasi, Zvi Priel, Ya'akov M. Mandelbaum, Tiecheng Lu, Issai Shlimak, Zeev Zalevsky, "Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures," Journal of Nanophotonics 10(3), 036001 (6 July 2016). https://doi.org/10.1117/1.JNP.10.036001


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