6 July 2016 Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures
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Abstract
The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Aviya Bennett, Aviya Bennett, Avraham R. Chelly, Avraham R. Chelly, Avi Karsenty, Avi Karsenty, Ilan Gadasi, Ilan Gadasi, Zvi Priel, Zvi Priel, Ya'akov M. Mandelbaum, Ya'akov M. Mandelbaum, Tiecheng Lu, Tiecheng Lu, Issai Shlimak, Issai Shlimak, Zeev Zalevsky, Zeev Zalevsky, } "Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures," Journal of Nanophotonics 10(3), 036001 (6 July 2016). https://doi.org/10.1117/1.JNP.10.036001 . Submission:
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