25 April 2017 Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings
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Abstract
Conditions of fabrication of first-order distributed-feedback surface gratings designed for single-mode Al0.45Ga0.55As/GaAs quantum cascades lasers with the emission wavelength of about 10  μm are presented. The 1-μm-deep rectangular-shaped gratings with the period of about 1.55  μm and duty cycle in the range of 65% to 71% made by the standard photolithography are demonstrated. The wavenumber difference of about 7  cm1 at 77 K is observed for the radiation emitted by lasers fabricated from the same epitaxial structure with ridge widths in the range of 15 to 25  μm. Moreover, the emission wavelength of the lasers could be tuned with temperature at a rate of 1  nm/K in the temperature range of 77 to 120 K. The full width at half maximum of the emitted spectra is 0.4  cm1.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2017/$25.00 © 2017 SPIE
Anna Szerling, Renata Kruszka, Kamil Kosiel, Marek Wzorek, Krystyna Gołaszewska, Artur Trajnerowicz, Piotr Karbownik, Maciej Kuc, Tomasz G. Czyszanowski, Michał J. Walczakowski, and Norbert Pałka "Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings," Journal of Nanophotonics 11(2), 026004 (25 April 2017). https://doi.org/10.1117/1.JNP.11.026004
Received: 27 February 2017; Accepted: 7 April 2017; Published: 25 April 2017
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Quantum cascade lasers

Gallium arsenide

Etching

Gallium

Reactive ion etching

Aluminum

Argon

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