3 May 2017 Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors
Author Affiliations +
Abstract
We calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5    μ m . In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Chijioke I. Oriaku, Timothy J. Spencer, Xu Yang, Jorge P. Zubelli, Mauro F. Pereira, "Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors," Journal of Nanophotonics 11(2), 026005 (3 May 2017). https://doi.org/10.1117/1.JNP.11.026005 . Submission: Received: 5 February 2017; Accepted: 29 March 2017
Received: 5 February 2017; Accepted: 29 March 2017; Published: 3 May 2017
JOURNAL ARTICLE
8 PAGES


SHARE
Back to Top