Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

Michael Bendayan; Roi Sabo; Roei Zolberg; Ya'akov M. Mandelbaum; Avraham Regis Chelly; Avi Karsenty

doi:10.1117/1.JNP.11.036016

23 August 2017 Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

Michael Bendayan, Roi Sabo, Roei Zolberg, Ya'akov M. Mandelbaum, Avraham Regis Chelly, Avi Karsenty

Author Affiliations +

Journal of Nanophotonics, Vol. 11, Issue 3, 036016 (August 2017). https://doi.org/10.1117/1.JNP.11.036016

Abstract

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal–oxide–semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device’s coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to 2 μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled by the drain voltage Vds while the peak emission wavelength depends on the channel thickness and slightly on Vds. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Michael Bendayan, Roi Sabo, Roei Zolberg, Ya'akov M. Mandelbaum, Avraham Regis Chelly, and Avi Karsenty "Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices," Journal of Nanophotonics 11(3), 036016 (23 August 2017). https://doi.org/10.1117/1.JNP.11.036016

Received: 1 March 2017; Accepted: 1 August 2017; Published: 23 August 2017

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KEYWORDS

Silicon

Quantum wells

Near infrared

Transistors

Oxides

Photons

Optical communications

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