24 April 2018 High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures
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Abstract
We report a simultaneous amplified emission from InAs-based self-assembled quantum dot and quantum well in a multistack dot-in-a-well superluminescent light-emitting diode (SLD) for application in broadband sources. A combination of atomic force microscopy, photoluminescence of the test structures, and optoelectronic characterization of SLD is used to obtain an emission bandwidth of ∼292  nm covering O–S communication band (including 850-nm band) and a maximum continuous power of ∼1.33  mW at room temperature.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mohammed Abdul Majid, Mohammed Abdul Majid, } "High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures," Journal of Nanophotonics 12(2), 026007 (24 April 2018). https://doi.org/10.1117/1.JNP.12.026007 . Submission: Received: 4 October 2017; Accepted: 3 April 2018
Received: 4 October 2017; Accepted: 3 April 2018; Published: 24 April 2018
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