11 May 2018 Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x < y) p-electron blocking layer
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Abstract
This work reports AlGaN-based deep ultraviolet light-emitting diode (DUV LED) possessing a specifically AlxGa1  −  xN  /  AlyGa1  −  yN  /  AlxGa1  −  xN (x  >  y) structured p-electron blocking layer (p-EBL) to achieve the high external quantum efficiency (EQE). The impact of the p-EBL with AlyGa1  −  yN insertion layer at different positions and with different AlN compositions on the hole and electron injection is systematically investigated. Our results show that, for the DUV LED structure in this work, both electrons and holes can be most efficiently injected into the active region by keeping the AlyGa1  −  yN insertion layer near to the p-region. The AlN composition for the AlyGa1  −  yN insertion layer has also to be optimized for maximizing the carrier injection.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Chunshuang Chu, Chunshuang Chu, Kangkai Tian, Kangkai Tian, Mengqian Fang, Mengqian Fang, Yonghui Zhang, Yonghui Zhang, Songhan Zhao, Songhan Zhao, Wengang Bi, Wengang Bi, Zi-Hui Zhang, Zi-Hui Zhang, } "Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x < y) p-electron blocking layer," Journal of Nanophotonics 12(4), 043503 (11 May 2018). https://doi.org/10.1117/1.JNP.12.043503 . Submission: Received: 25 March 2018; Accepted: 25 April 2018
Received: 25 March 2018; Accepted: 25 April 2018; Published: 11 May 2018
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