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14 June 2018 Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure
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Abstract
The paper demonstrates the design, simulation, fabrication, and analysis of InGaN/GaN superlattice (SL) solar cell with photonic crystal (PhC) structure at the top surface. Ten pairs of In0.18Ga0.82N  /  GaN structure were grown by metal organic chemical vapor deposition technique and had been used as an absorbing layer for solar cell device. PhC light-trapping structure (LTS) was prepared with the top indium tin oxide and p-GaN layers. Both simulation and experimental results demonstrate that PhC LTS structure considerably enhances the efficiency of solar cells. The simulation parameters were optimized and calculated using rigorous-coupled wave analysis method. The experimental studies under 1-sun illumination at standard test conditions exhibit efficiency enhancement of 59% compared to SL structure without PhC LTS.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2018/$25.00 © 2018 SPIE
Nikhil Deep Gupta, Vijay Janyani, Manish Mathew, Monika Kumari, and Rajendra Singh "Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure," Journal of Nanophotonics 12(4), 043505 (14 June 2018). https://doi.org/10.1117/1.JNP.12.043505
Received: 8 March 2018; Accepted: 30 May 2018; Published: 14 June 2018
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