20 June 2018 Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si
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Abstract
AlGaN-based near-ultraviolet light-emitting diodes (NUV-LEDs) emitting at 370 nm were grown on Si(111) substrates by metal-organic chemical vapor deposition. The effect of growth parameters of Si-doped n-type AlGaN thick layer on the material quality and optical performance was studied. Photoluminescence measurements showed that the near-band-edge emission of n-AlGaN was greatly increased and the yellow luminescence (YL) was substantially reduced, when the n-AlGaN layer was grown at a high temperature, a high chamber pressure, and a low growth rate. It was found that the reduced unintentional carbon incorporation in the n-AlGaN layer under those growth conditions was responsible for the improved optical property. The NUV-LED employing the optimized growth parameters of n-AlGaN showed an enhanced light output power and a suppressed YL emission, as well as a better color purity, as compared with the reference one. The results indicate that performance of NUV-LED can be significantly improved by suppressing unintentional carbon incorporation and the defects-related absorption/re-emission in the n-AlGaN.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Zengcheng Li, Zengcheng Li, Legong Liu, Legong Liu, Yingnan Huang, Yingnan Huang, Meixin Feng, Meixin Feng, Jianxun Liu, Jianxun Liu, Qian Sun, Qian Sun, Xiujian Sun, Xiujian Sun, Xiaoning Zhan, Xiaoning Zhan, Hongwei Gao, Hongwei Gao, Yu Zhou, Yu Zhou, Huaibing Wang, Huaibing Wang, Hanmin Zhao, Hanmin Zhao, Hui Yang, Hui Yang, } "Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si," Journal of Nanophotonics 12(4), 043507 (20 June 2018). https://doi.org/10.1117/1.JNP.12.043507 . Submission: Received: 26 March 2018; Accepted: 4 June 2018
Received: 26 March 2018; Accepted: 4 June 2018; Published: 20 June 2018
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