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20 November 2019 Chipscale plasmonic modulators and switches based on metal–insulator–metal waveguides with Ge2Sb2Te5
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Abstract

We introduce phase-change material Ge2Sb2Te5 (GST) into metal–insulator–metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and nonvolatile modulators and switches with excellent modulation depth 14 dB and fast response time in subnanosecond while possessing small footprints, simple frameworks, and easy fabrication. We provide solutions to design active devices in MIM waveguide systems and can find potential applications in more compact all-optical circuits for information processing and storage.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2019/$28.00 © 2019 SPIE
Zhaojian Zhang, Junbo Yang, Wei Bai, Yunxin Han, Xin He, Jingjing Zhang, Jie Huang, DIngbo Chen, Siyu Xu, and Wanlin Xie "Chipscale plasmonic modulators and switches based on metal–insulator–metal waveguides with Ge2Sb2Te5," Journal of Nanophotonics 13(4), 046009 (20 November 2019). https://doi.org/10.1117/1.JNP.13.046009
Received: 24 July 2019; Accepted: 7 November 2019; Published: 20 November 2019
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