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10 March 2020 Temperature dependences of photoluminescence intensities observed from AgInGaS and AgInGaS/GaS x core–shell nanoparticles
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Abstract

We report on the observation of similar temperature dependences of PL intensities of AgInGaS nanoparticles and AgInGaS  /  GaSx core–shell nanoparticles. The intensity of band-edge emission in AgInGaS  /  GaSx increases with temperature up to 200 K, and the intensity at room temperature is on the order of that at 5 K. Using a model that includes effects of thermal activation of carriers from trap states, we propose that a shallow trap state exists in the AgInGaS core, and the higher PL intensity of the band-edge emission at 200 K is due to the radiative recombination of carriers that have been thermally activated from the shallow state. Time-resolved PL measurements are employed to support this interpretation.

© 2020 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2020/$28.00 © 2020 SPIE
Masayoshi Ichimiya, Tatsuya Kameyama, Tsukasa Torimoto, Taro Uematsu, Susumu Kuwabata, and Masaaki Ashida "Temperature dependences of photoluminescence intensities observed from AgInGaS and AgInGaS/GaS x core–shell nanoparticles," Journal of Nanophotonics 14(1), 016010 (10 March 2020). https://doi.org/10.1117/1.JNP.14.016010
Received: 30 November 2019; Accepted: 21 February 2020; Published: 10 March 2020
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