1 January 2009 Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning
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Abstract
As an alternate Quantum Dot (QD) fabrication method to self-assembled SK mode QDs, diblock copolymer nano-patterned QDs were investigated. By employing selective growth of QDs on diblock copolymer nano-patterned masks, independence from the problematic wetting layer and controllability on QD size and distribution associated with SK growth mode QDs were realized. The diblock copolymer nano-patterned masks were fabricated using a diblock copolymer template and a dielectric mask, and InxGa1-xAs QDs were selectively grown on patterned GaAs and InP substrates by Metalorganic Chemical Vapor Deposition (MOCVD). The optical properties from diblock copolymer patterned QDs on III-V substrates were investigated at low temperature.
Joo Hyung Park, Chi-Chun Liu, Manish K. Rathi, Luke J. Mawst, Paul F. Nealey, Thomas F. Kuech, "Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning," Journal of Nanophotonics 3(1), 031604 (1 January 2009). https://doi.org/10.1117/1.3085990 . Submission:
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