1 January 2009 Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning
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Abstract
As an alternate Quantum Dot (QD) fabrication method to self-assembled SK mode QDs, diblock copolymer nano-patterned QDs were investigated. By employing selective growth of QDs on diblock copolymer nano-patterned masks, independence from the problematic wetting layer and controllability on QD size and distribution associated with SK growth mode QDs were realized. The diblock copolymer nano-patterned masks were fabricated using a diblock copolymer template and a dielectric mask, and InxGa1-xAs QDs were selectively grown on patterned GaAs and InP substrates by Metalorganic Chemical Vapor Deposition (MOCVD). The optical properties from diblock copolymer patterned QDs on III-V substrates were investigated at low temperature.
Joo Hyung Park, Joo Hyung Park, Chi-Chun Liu, Chi-Chun Liu, Manish K. Rathi, Manish K. Rathi, Luke J. Mawst, Luke J. Mawst, Paul F. Nealey, Paul F. Nealey, Thomas F. Kuech, Thomas F. Kuech, "Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning," Journal of Nanophotonics 3(1), 031604 (1 January 2009). https://doi.org/10.1117/1.3085990 . Submission:
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