1 January 2011 Structural optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser
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J. of Nanophotonics, 5(1), 059502 (2011). doi:10.1117/1.3562569
Abstract
On the basis of the analysis of material gain, a comprehensive optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser was carried out. For a single-well structure, the optimized width lies between 8 and 10 nm, the optimized depth is a quantum well with ∼0.1 Al composition in AlGaAs barrier, and the optimized configurations are graded-index quantum well and quantum well with AlGaAs barrier and a GaAs buffer layer. The optimal width of a double- or triple-well structure lies between 6 and 8 nm. Compared to its single- and triple-well counterparts, double-well structure provides higher gain and has more tolerance to the deviation of laser wavelength.
Peng Zhang, Yanrong Song, Teli Dai, Yiping Liang, "Structural optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser," Journal of Nanophotonics 5(1), 059502 (1 January 2011). http://dx.doi.org/10.1117/1.3562569
Submission: Received ; Accepted
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KEYWORDS
Quantum wells

Aluminum

Gallium arsenide

Tolerancing

Electrons

Transition metals

Laser applications

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