1 January 2011 Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes
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Abstract
The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bruno Viana, Oleg Lupan, Thierry Pauporté, "Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes," Journal of Nanophotonics 5(1), 051816 (1 January 2011). https://doi.org/10.1117/1.3604783 . Submission:
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