1 January 2011 Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes
Author Affiliations +
Abstract
The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Bruno Viana, Bruno Viana, Oleg Lupan, Oleg Lupan, Thierry Pauporté, Thierry Pauporté, } "Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes," Journal of Nanophotonics 5(1), 051816 (1 January 2011). https://doi.org/10.1117/1.3604783 . Submission:
JOURNAL ARTICLE
9 PAGES


SHARE
RELATED CONTENT

Toward blue emission in ZnO based LED
Proceedings of SPIE (February 06 2012)
From nanowire lasers to quantum wire lasers
Proceedings of SPIE (June 17 2004)
ZnO nanowires for tunable near-UV/blue LED
Proceedings of SPIE (February 28 2012)

Back to Top