1 January 2011 Scattering effects in resonant magnetotunneling in InAs-based heterostructures
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J. of Nanophotonics, 5(1), 051819 (2011). doi:10.1117/1.3611018
Electron transport through an InGaAs resonant tunneling structure with Rashba spin-orbit interaction and magnetic field parallel to the growth direction was studied theoretically. A nonequilibrium Green's function model was used, wherein interface roughness and longitudinal optical phonon scattering are treated in the self-consistent first Born approximation. The model predicts the main features of the two-dimensional magnetopolaron density of states and the secondary peaks in the I-V curve due to both resonant elastic and inelastic scattering. The I-V curves were studied at magnetic fields around the magnetophonon resonance and the elastic and inelastic contributions identified. At these fields (5 to 7 T), the current spin polarization was found to be dominated by the Zeeman effect and significant even in the presence of scattering events.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Goran Isic, Dragan Indjin, Vitomir Milanovic, Jelena V. Radovanovic, Zoran Ikonic, Paul Harrison, "Scattering effects in resonant magnetotunneling in InAs-based heterostructures," Journal of Nanophotonics 5(1), 051819 (1 January 2011). https://doi.org/10.1117/1.3611018


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