1 January 2011 Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles
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Abstract
The hybrid optically and electrically controllable field effect transistor is a novel device whose current-voltage (I-V) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Doron Abraham, Asaf Shahmoon, Amihai Meiri, Zeev Zalevsky, "Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles," Journal of Nanophotonics 5(1), 051825 (1 January 2011). https://doi.org/10.1117/1.3646101 . Submission:
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