1 January 2011 Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles
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Abstract
The hybrid optically and electrically controllable field effect transistor is a novel device whose current-voltage (I-V) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Doron Abraham, Doron Abraham, Asaf Shahmoon, Asaf Shahmoon, Amihai Meiri, Amihai Meiri, Zeev Zalevsky, Zeev Zalevsky, } "Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles," Journal of Nanophotonics 5(1), 051825 (1 January 2011). https://doi.org/10.1117/1.3646101 . Submission:
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