1 January 2011 Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates
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Abstract
Surface-enhanced Raman spectroscopy (SERS) substrates formed by nanosphere lithography were investigated for their spatial distribution and magnitude of electric field enhancement. An integrated atomic force microscopy and Raman micro-spectroscopy system was used to establish, with high accuracy, the correlation between the local SERS mappings and substrate topography. Using a monolayer of rhodamine 6G as a probe of the local electric field, the high resolution Raman mappings, showed that the highest electric field enhancement originates from the metallic nanostructures rather than the gaps between them. The enhancement factor of the substrates is calculated from Raman spectra of the substrates covered in a monolayer of p-aminothiophenol and spatial measurements, giving a value on the order of 105. The experimental results were confirmed by theoretical calculations using the finite element method.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
Claire S. Sweetenham, Claire S. Sweetenham, Ioan Notingher, Ioan Notingher, } "Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates," Journal of Nanophotonics 5(1), 059504 (1 January 2011). https://doi.org/10.1117/1.3595345 . Submission:
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