2 July 2012 Publisher's Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy
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J. of Nanophotonics, 6(1), 060103 (2012). doi:10.1117/1.JNP.6.060103
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Sellai, Kruszewski, Mesli, Peaker, and Missous: Publisher’s Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

This article was originally published in Vol. 6 of the Journal of Nanophotonics on 24 February 2012 in the wrong section of the table of contents and with an incorrect citation identifier (CID) of 013502. The paper was removed and republished online with the correct CID of 063502 on 8 March 2012. This change was made in order for the paper to appear under the correct section heading, “Research Papers.”

For more information on the use of CIDs in JNP, see http://spiedigitallibrary.org/jnp/citation_format.

Azzouz Sellai, Piotr Kruszewski, Abdelmadjid Mesli, Anthony R. Peaker, Mohamed Missous, "Publisher's Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy," Journal of Nanophotonics 6(1), 060103 (2 July 2012). http://dx.doi.org/10.1117/1.JNP.6.060103
Submission: Received ; Accepted
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KEYWORDS
Spectroscopy

Gallium arsenide

Quantum dots

Indium arsenide

Physics

Electronics engineering

Nanostructures

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