26 July 2012 Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
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Abstract
We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Tamara F. Gundogdu, Mutlu Gökkavas, Ekmel Özbay, "Absorption enhancement in InGaN-based photonic crystal-implemented solar cells," Journal of Nanophotonics 6(1), 061603 (26 July 2012). https://doi.org/10.1117/1.JNP.6.061603 . Submission:
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