25 September 2012 Multilayer photonic logic gate integrated into microelectronic chip
Author Affiliations +
J. of Nanophotonics, 6(1), 061607 (2012). doi:10.1117/1.JNP.6.061607
An all-optical XOR gate was designed to take advantage of the previously unused silicon dioxide (SiO2) interconnect layers in a microelectronic chip. The device relies on the coupling of modes between parallel waveguides and the interaction of the modes with the metal interconnects of a silicon chip to obtain a phase difference between input arms. When the signals from the two input arms interfere, the result is a logic XOR operation due to the phase difference. The design was numerically implemented, and a contrast of 18.7 dB was obtained with a 13.2-μm-long logic gate.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Amihai Meiri, Shai Tzur, Yosi Cohen, Ori Bass, Alexander Fish, Zeev Zalevsky, "Multilayer photonic logic gate integrated into microelectronic chip," Journal of Nanophotonics 6(1), 061607 (25 September 2012). https://doi.org/10.1117/1.JNP.6.061607

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